SI2305CDS-T1-GE3

Manufacturer:
Vishay / Siliconix
Part Number:
SI2305CDS-T1-GE3
Category:
Single FETs, MOSFETs
Description:
MOSFET P-CH 8V 5.8A SOT23-3
Datasheets:
RoHS Status:
Lead free/Rosh Compliant
In Stock:
49,248

Specifications

TYPE
DESCRIPTION
Manufacturer :
Vishay / Siliconix
Category :
Single FETs, MOSFETs
Current - Continuous Drain (Id) @ 25°C :
5.8A (Tc)
Drain to Source Voltage (Vdss) :
8 V
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds :
960 pF @ 4 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) :
960mW (Ta), 1.7W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
35mOhm @ 4.4A, 4.5V
Supplier Device Package :
SOT-23-3 (TO-236)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±8V
Vgs(th) (Max) @ Id :
1V @ 250µA

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