XK1R9F10QB,LXGQ
- Manufacturer:
- Toshiba Electronic Devices and Storage Corporation
- Part Number:
- XK1R9F10QB,LXGQ
- Category:
- Single FETs, MOSFETs
- Description:
- MOSFET N-CH 100V 160A TO220SM
- Datasheets:
- RoHS Status:
-
Lead free/Rosh Compliant
- In Stock:
- 9,465
Specifications
- TYPE
- DESCRIPTION
- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Category :
- Single FETs, MOSFETs
- Current - Continuous Drain (Id) @ 25°C :
- 160A (Ta)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 184 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500 pF @ 10 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 175°C
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 375W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 1.92mOhm @ 80A, 10V
- Supplier Device Package :
- TO-220SM(W)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 1mA
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